Semiconductor structure including an electrode cover layer over a capacitor of a dynamic random access memory (DRAM) formed in a substrate, and a contact structure electrically connected to the electrode cover layer, and method of making the same

A method for preparing a semiconductor structure, comprising:

• forming an electrode cover layer on a substrate and over a capacitor or a capacitor structure or a capacitor array in the substrate;
• forming a first conductive structure on an upper surface of the electrode cover layer;
• and
• forming an insulating layer on the first conductive structure, and forming a contact structure in the insulating layer;
• wherein, the contact structure comprises a first contact layer and a second contact layer;
• wherein the first contact layer is in electric contact with the first conductive structure;
• wherein a bottom surface of the second contact layer is in electric contact with a top surface of the first contact layer;
• wherein a width of the first contact layer is greater than a width of a bottom surface of the second contact layer;
• wherein a lower surface of the contact structure is not lower than a lower surface of the electrode cover layer;
• and
• wherein a resistivity of the first conductive structure is not greater than a resistivity of the contact structure, and not greater than a resistivity of the electrode cover layer.

A method for fabricating a semiconductor structure, comprising:

• forming an electrode cover layer on a substrate and over a capacitor or a capacitor structure or a capacitor array in the substrate;
• forming a first contact layer in the electrode cover layer;
• forming a first conductive structure on an upper surface of the electrode cover layer and an upper surface of the first contact layer;
• forming an insulating layer on the first conductive structure;
• and
• forming a second contact layer in the insulating layer and the first conductive structure, wherein a bottom surface of the second contact layer is in electric contact with a top surface of the first contact layer;
• wherein a contact structure comprises the first contact layer and the second contact layer;
• wherein a width of the first contact layer is greater than a width of the bottom surface of the second contact layer;
• wherein a lower surface of the contact structure is not lower than a lower surface of the electrode covering layer;
• and
• wherein a resistivity of the first conductive structure is not greater than a resistivity of the contact structure and is not greater than a resistivity of the electrode covering layer.