Substrate processing system and substrate processing method using the same

A substrate processing system, comprising:

• track equipment configured to apply photoresist film on a semiconductor substrate, the track equipment configured to form a photoresist pattern from the photoresist film;
• and
• an exposure apparatus configured to irradiate light onto the photoresist film to form a photoresist pattern region,
• the track equipment comprising:
• a coating apparatus configured to coat the photoresist film on the semiconductor substrate;
• a developing system configured to remove an unnecessary region from the photoresist film except for the photoresist pattern region to form a photoresist pattern, the developing system including a wet developing apparatus and a dry developing apparatus adjacent one another, the wet developing apparatus configured to remove the unnecessary region using a developing solution, the dry developing apparatus configured to remove the unnecessary region using a developing gas;
• a cleaning apparatus including a cleaning chamber and configured to remove an edge bead of the photoresist film or the photoresist pattern on an edge region of the semiconductor substrate;
• and
• a heating apparatus configured to heat the photoresist film or the photoresist pattern,
• wherein the developing system is configured to select at least one of the wet developing apparatus and the dry developing apparatus according to a type of the semiconductor substrate as a developing apparatus to form the photoresist pattern.

A substrate processing system, comprising:

• track equipment configured to apply a photoresist film on a semiconductor substrate, the track equipment configured to form a photoresist pattern from the photoresist film;
• and
• an exposure apparatus configured to irradiate light onto the photoresist film to form a photoresist pattern region,
• the track equipment comprising:
• a coating apparatus configured to apply the photoresist film on the semiconductor substrate;
• a developing system configured to remove an unnecessary region from the photoresist film except for the photoresist pattern region to form a photoresist pattern, the developing system comprising a wet developing apparatus and an adjacent dry developing apparatus, the wet developing apparatus configured to remove the unnecessary region with a developing solution, the dry developing apparatus configured to remove the unnecessary region with a developing gas, the developing system configured to select at least one of the wet developing apparatus and the dry developing apparatus as a developing device to form the photoresist pattern;
• a cleaning apparatus including a single cleaning chamber that provides a space for (i) cleaning the semiconductor substrate with a cleaning gas and (ii) removing an edge bead of the photoresist film or the photoresist pattern on an edge region of the semiconductor substrate;
• a heating apparatus configured to heat the photoresist film or the photoresist pattern;
• a development inspection apparatus configured to inspect a quality of the photoresist pattern formed on the semiconductor substrate;
• and
• a transfer device configured to transfer the semiconductor substrate among the coating apparatus, the wet developing apparatus, the dry developing apparatus, the cleaning apparatus, and the heating apparatus,
• wherein one of the wet developing apparatus and the dry developing apparatus shares a common deposition chamber with the coating apparatus.