Integrated circuit device

An integrated circuit device, comprising:

• a substrate;
• a first transistor over the substrate, wherein the first transistor comprises a semiconductor fin, a first gate structure over the semiconductor fin, and a doped semiconductor source/drain region alongside the first gate structure and over the semiconductor fin;
• an interconnect structure over the first transistor;
• and
• a second transistor over the interconnect structure, wherein the second transistor comprises a transition metal dichalcogenide layer, a second gate structure over the transition metal dichalcogenide layer, and a second source/drain contact in direct contact with the transition metal dichalcogenide layer, wherein the transition metal dichalcogenide layer has a bottommost surface lower than a bottommost surface of the second source/drain contact.

An integrated circuit device, comprising:

• a non-insulator structure;
• a conductive structure over the non-insulator structure, wherein the conductive structure comprises a transition metal dichalcogenide layer in contact with the non-insulator structure and a conductive feature having sidewalls interfacing with the transition metal dichalcogenide layer, wherein a bottommost surface of the conductive feature interfaces with the transition metal dichalcogenide layer;
• and
• a dielectric layer surrounding the conductive structure.