Substrate treating apparatus and substrate treating method

A substrate treating apparatus, comprising:

• a process chamber including an inner space for treating a substrate is formed;
• an ion blocker dividing the inner space into a plasma generating space and a treatment space;
• a substrate support unit configured to support the substrate in the treatment space;
• an exhaust unit configured to exhaust the treatment space;
• an anneal source above the ion blocker and configured to transmit energy for annealing to the substrate through the ion blocker;
• a plasma source configured to apply energy for exciting a process gas in the plasma generating space into plasma;
• a gas supply unit configured to supply the process gas to the plasma generating space;
• and
• a controller,
• wherein the ion blocker includes a material through which microwaves are transmittable, and is formed with a plurality of through-holes,
• wherein the controller is configured to control the gas supply unit and the plasma source to perform a first process by exciting the process gas into plasma in the plasma generating space in response to the substrate being loaded into the treatment space, and to block supply of the process gas in a plasma state to where the substrate is continuously supported in the substrate support unit, and
• applies energy for the annealing to the substrate,
• wherein the ion blocker is configured to block ions from passing through the ion blocker and allow radicals to pass through the ion blocker, and
• wherein the energy for the annealing to the substrate is a first microwave.