Memory with electrically programmable fuse blown result correcting function and operational method thereof
AssigneeEtron Technology, Inc.
InventorsHo-Yin Chen, Ting-Feng Chang, Bo-Han Zhang
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AssigneeEtron Technology, Inc.
InventorsHo-Yin Chen, Ting-Feng Chang, Bo-Han Zhang
Estimating the term…
A memory includes a plurality of e-fuse sets, a sensing circuit, an Error-Correcting Code (ECC) circuit, and a plurality of registers. Each e-fuse set includes a plurality of e-fuses, and each e-fuse of the plurality of e-fuses corresponds to a first blown result. The sensing circuit senses the plurality of e-fuses to output a plurality of first blown results. The ECC circuit receives the plurality of first blown results and corrects a first blown result if the first blown result includes an error or directly outputs the first blown result if the first blown result comprises no error to generate a second blown result. The plurality of registers receive a plurality of second blown results. The plurality of second blown results adjusts predetermined settings of the memory, and a number of the plurality of registers is less than a number of the plurality of e-fuses.
A memory with electrically programmable fuse (e-fuse) blown result correcting function, comprising:
A memory with e-fuse blown result correcting function, comprising:
An operational method of a memory with e-fuse blown result correcting function, wherein the memory comprises a plurality of e-fuse sets, a sensing circuit, an Error-Correcting Code (ECC) circuit and a plurality of registers, comprising:
Dependencies are inferred from the claim text.