Power supply circuit and chip
AssigneeChangxin Memory Technologies, Inc.
InventorsJianyong Qin, Weibing Shang
Life of this patent
Estimating the term…
Abstract
A power supply circuit and a chip to which the power supply circuit is applied are disclosed. The power supply circuit includes a constant current generation circuit and a voltage generation circuit. The constant current generation circuit is configured to generate a first current with a positive temperature coefficient and a second current with a negative temperature coefficient, and generate a constant current according to the first current and the second current. The voltage generation circuit includes a transistor, is coupled to the constant current generation circuit, and configured to generate a temperature-dependent voltage according to the constant current and characteristics of the transistor.
Claims18
A power supply circuit, comprising:
- a constant current generation circuit, configured to generate a first current with a positive temperature coefficient and a second current with a negative temperature coefficient, and generate a constant current according to the first current and the second current;
- and
- a voltage generation circuit, comprising a transistor, coupled to the constant current generation circuit, and configured to generate a temperature-dependent voltage according to the constant current and characteristics of the transistor;
- wherein the constant current generation circuit comprises:
- a positive temperature coefficient current generation sub-circuit, configured to generate the first current;
- wherein the positive temperature coefficient current generation sub-circuit comprises:
- a first amplifier;
- a first feedback transistor, provided with a source connected to a power supply voltage, a gate connected to an output end of the first amplifier, and a drain connected to a first node;
- a first bridge arm, comprising a first resistor and a plurality of parallel-connected first PN junction sub-circuits, the first resistor and the first PN junction sub-circuits connected in series, the first resistor provided with a first end connected to the first node and a second end connected to an inverted input end of the first amplifier, each of the first PN junction sub-circuits provided with a positive electrode connected to the inverted input end of the first amplifier and a negative electrode grounded;
- a second bridge arm, comprising a second resistor, a third resistor and a plurality of parallel-connected second PN junction sub-circuits, the second resistor, the third resistor and the second PN junction sub-circuits connected in series, the second resistor provided with a first end connected to the first node and a second end connected to an in-phase input end of the first amplifier, the third resistor provided with a first end connected to the in-phase input end of the first amplifier and a second end connected to a positive electrode of each of the second PN junction sub-circuits, a negative electrode of each of the second PN junction sub-circuits grounded;
- and
- a first output transistor, provided with a source connected to the power supply voltage, a gate connected to the output end of the first amplifier, and a drain configured to output the first current.
A chip, comprising a power supply circuit, wherein the power supply circuit comprises:
- a constant current generation circuit, configured to generate a first current with a positive temperature coefficient and a second current with a negative temperature coefficient, and generate a constant current according to the first current and the second current;
- and
- a voltage generation circuit, comprising a transistor, coupled to the constant current generation circuit, and configured to generate a temperature-dependent voltage according to the constant current and characteristics of the transistor;
- wherein the constant current generation circuit comprises:
- a positive temperature coefficient current generation sub-circuit, configured to generate the first current;
- wherein the positive temperature coefficient current generation sub-circuit comprises:
- a first amplifier;
- a first feedback transistor, provided with a source connected to a power supply voltage, a gate connected to an output end of the first amplifier, and a drain connected to a first node;
- a first bridge arm, comprising a first resistor and a plurality of parallel-connected first PN junction sub-circuits, the first resistor and the first PN junction sub-circuits connected in series, the first resistor provided with a first end connected to the first node and a second end connected to an inverted input end of the first amplifier, each of the first PN junction sub-circuits provided with a positive electrode connected to the inverted input end of the first amplifier and a negative electrode grounded;
- a second bridge arm, comprising a second resistor, a third resistor and a plurality of parallel-connected second PN junction sub-circuits, the second resistor, the third resistor and the second PN junction sub-circuits connected in series, the second resistor provided with a first end connected to the first node and a second end connected to an in-phase input end of the first amplifier, the third resistor provided with a first end connected to the in-phase input end of the first amplifier and a second end connected to a positive electrode of each of the second PN junction sub-circuits, a negative electrode of each of the second PN junction sub-circuits grounded;
- and
- a first output transistor, provided with a source connected to the power supply voltage, a gate connected to the output end of the first amplifier, and a drain configured to output the first current.
Dependencies are inferred from the claim text.