Method of reducing undesired light influence in extreme ultraviolet exposure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Tsung Shih, Chen-Ming Wang, Yahru Cheng, Bo-Tsun Liu, Tsung Chuan Lee
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Abstract
A method of generating a layout pattern includes disposing a photoresist layer of a resist material on a substrate and disposing a top layer over of the photoresist layer. The top layer is transparent for extreme ultraviolet (EUV) radiation and the top layer is opaque for deep ultraviolet (DUV) radiation. The method further includes irradiating the photoresist layer with radiation generated from an EUV radiation source. The radiation passes through the top layer to expose the photoresist layer.
Claims20
A method of manufacturing a semiconductor device, comprising:
- forming a photoresist layer over a wafer;
- forming a spectral filter to a thickness over the photoresist layer, wherein the spectral filter is in direct contact with the photoresist layer and comprises a polysilicon;
- and
- generating ultraviolet radiation that includes extreme ultraviolet (EUV) radiation and deep ultraviolet (DUV) radiation,
- wherein the thickness of the spectral filter is sufficient to reflect the DUV radiation,
- the spectral filter comprises a membrane including the polysilicon deposited over a silicon nitride layer, and wherein the membrane is in direct contact with the photoresist layer, and
- the EUV radiation passes through the spectral filter and exposes the photoresist layer.
A method of manufacturing a semiconductor device, comprising:
- calculating a thickness of a spectral filter by selecting a first wavelength of a deep ultraviolet (DUV) radiation, wherein the thickness of the spectral filter is based on the first wavelength;
- depositing the spectral filter to the calculated thickness over a photoresist layer, wherein the spectral filter is in direct contact with the photoresist layer and comprises a polysilicon;
- and
- generating ultraviolet radiation that includes extreme ultraviolet (EUV) radiation and the DUV radiation,
- wherein the EUV radiation passes through the spectral filter and exposes the photoresist layer,
- the spectral filter comprises a membrane including the polysilicon deposited over a silicon nitride layer, wherein the membrane is in direct contact with the photoresist layer, and
- the spectral filter attenuates the DUV radiation.
A method of manufacturing a semiconductor device, comprising:
- forming a photoresist layer on a wafer;
- selecting a wavelength of an out-of-band deep ultraviolet (DUV) radiation of an extreme ultraviolet (EUV) radiation source;
- determining a first thickness of a spectral layer based on the selected wavelength, wherein the first thickness of the spectral layer is sufficient to reflect the selected wavelength of the DUV radiation;
- forming the spectral layer having the first thickness in direct contact with the photoresist layer, wherein the spectral layer comprises a polysilicon;
- and
- generating EUV radiation from the EUV radiation source,
- wherein the EUV radiation passes through the spectral layer and exposes the photoresist layer,
- the spectral layer comprises a membrane including the polysilicon deposited over a silicon nitride layer, wherein the membrane is in direct contact with the photoresist layer, and
- the spectral layer attenuates the DUV radiation.
Dependencies are inferred from the claim text.