Substrate processing apparatus and substrate processing method
AssigneeTokyo Electron Limited
InventorTakumi Honda
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Abstract
A substrate processing apparatus includes a substrate processing unit and a controller. The substrate processing unit is configured to perform an etching processing on one or more substrates each having a silicon nitride film and a silicon oxide film on a surface thereof with a processing liquid containing a phosphoric acid aqueous solution and a silicic acid compound. The controller is configured to control individual components of the substrate processing apparatus. The controller includes a concentration control unit configured to control a phosphoric acid concentration of the processing liquid such that etching selectivity of the silicon nitride film with respect to the silicon oxide film falls within a given range from a beginning of the etching processing to an end thereof.
Claims13
A substrate processing apparatus, comprising:
- a substrate processing unit configured to perform an etching processing on one or more substrates each having a silicon nitride film and a silicon oxide film on a surface thereof with a processing liquid containing phosphoric acid and a silicic acid compound;
- and
- a controller configured to control individual components of the substrate processing apparatus,
- wherein the controller comprises a concentration control unit configured to control a phosphoric acid concentration of the processing liquid such that etching selectivity of the silicon nitride film with respect to the silicon oxide film falls within a given range from a beginning of the etching processing to an end thereof.
A substrate processing method, comprising:
- etching one or more substrates each having a silicon nitride film and a silicon oxide film formed on a surface thereof with a processing liquid containing phosphoric acid and a silicic acid compound;
- and
- controlling a phosphoric acid concentration of the processing liquid such that etching selectivity of the silicon nitride film with respect to the silicon oxide film falls within a given range from a beginning of the etching processing to an end thereof.
Dependencies are inferred from the claim text.