Photoresist composition including a chrysene compound, method of forming a pattern using the same, and method of fabricating 6-nitrochrysene

A method of forming a pattern, the method comprising:

• forming an etching target layer on a substrate;
• coating the etching target layer with a photoresist composition to form a photoresist layer;
• performing an exposure process on the photoresist layer;
• performing a developing process on the photoresist layer to form a photoresist pattern;
• and
• etching the etching target layer using the photoresist pattern as an etch mask to form a mask pattern,
• wherein:
• the photoresist composition includes:
• a polymer resin;
• a photo acid generator;
• a quencher;
• an organic solvent;
• and
• an etching resistance enhancer, and
• the etching resistance enhancer is represented by the following Chemical Formula 1,
• in Chemical Formula 1, R is a nitro group, a nitrile group, a trifluoromethyl group, an acetate group, or a triisopropylsilyl group.

A method of synthesizing 6-nitrochrysene, the method comprising:

• dissolving 1-(chloromethyl)naphthalene in a first solvent to prepare a first solution, adding triphenylphosphine into the first solution, and stirring the first solution to obtain a first product;
• filtering the first product and washing the first product with a first detergent;
• dissolving the first product in a second solvent to prepare a second solution, and adding tetrabutylammoniumhydroxide and benzaldehyde into the second solution and stirring the second solution to obtain a second product;
• separating and purifying the second product using a column chromatography;
• dissolving the second product in a third solvent to prepare a third solution, and adding iodine into the third solution and irradiating ultraviolet rays to the third solution while stirring the third solution;
• removing iodine from the third solution by using an aqueous sodium thiosulfate solution and performing a first extraction process by using water and toluene to obtain a first organic layer;
• removing toluene from the first organic layer and washing the first organic layer using a second detergent to obtain a third product;
• dissolving the third product in a fourth solvent to prepare a fourth solution;
• and
• adding a nitric acid solution into the fourth solution and reacting the third product with the nitric acid solution.