Gallium nitride particles and method for producing same
AssigneeTosoh Corporation
InventorsMasami Mesuda, Hideto Kuramochi
Life of this patent
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Abstract
Provided are gallium nitride particles that have a low oxygen content and a high moldability and allow a gallium nitride sputtering target having a high density and a high strength to be produced. By causing a mixed powder of gallium oxide and gallium nitride to react at a temperature of 1000-1100° C. such that an ammonia reaction amount per hour is 1 or more times (by mole) an amount of gallium charged, gallium nitride particles are obtained of which an oxygen content is 1 atm % or less, an average particle size of primary particles is 5 μm or more, and a particle size of a range of 10 area % from smallest particles of a particle size distribution (10% particle size) is 3 μm or less.
Claims13
A composition, comprising:
- a plurality of gallium nitride particles including primary particles,
- wherein an oxygen content is 1 atm % or less, an average particle size of the primary particles is at least 5 μm, the primary particles include substantially spherical particles, and a particle size of a range of 10 area % from smallest particles of a particle size distribution is 3 μm or less, and
- wherein gallium nitride particles that have substantially spherical shapes are from 25 area % to 43.9 area % of all the gallium nitride particles.
A method for producing a composition, the method comprising:
- performing a nitriding process that reacts a mixed powder of gallium oxide and gallium nitride at a temperature of from 1000° C. to 1100° C. for at least 3 hours such that an ammonia reaction amount per hour is 1 or more times an amount by mole of gallium charged,
- wherein the composition comprises
- a plurality of gallium nitride particles including primary particles,
- wherein an oxygen content is 1 atm % or less, an average particle size of the primary particles is at least 5 μm, the primary particles include substantially spherical particles, and a particle size of a range of 10 area % from smallest particles of a particle size distribution is 3 μm or less, and
- wherein gallium nitride particles that have substantially spherical shapes are from 25 area % to 43.9 area % of all the gallium nitride particles.
A method for producing a composition, the method comprising:
- performing a nitriding process that reacts a mixed powder of gallium oxide and gallium nitride at a temperature of from 1000° C. to 1100° C. for at least 3 hours such that an ammonia reaction amount per hour is 1 or more times an amount by mole of gallium charged,
- wherein the composition comprises
- a plurality of gallium nitride particles including primary particles,
- wherein an oxygen content is 1 atm % or less, an average particle size of the primary particles is at least 5 82 m, the primary particles include substantially spherical particles, and a particle size of a range of 10 area % from smallest particles of a particle size distribution is 3 μm or less,
- wherein gallium nitride particles that have substantially spherical shapes are from 25 area % to 43.9 area % of all the gallium nitride particles, and
- wherein a particle size distribution of secondary particles has multiple peaks, an apex of a peak on a side of smallest particle sizes is 90 μm or less, and a content rate thereof is at least 10 wt % of all the gallium nitride particles.
Dependencies are inferred from the claim text.