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US 12,514,136 B2Granted
Voltage-assisted annealing to alter tunnel junction properties
AssigneeRigetti & Co, LLC
InventorsDavid Pappas, Mark Field, Eyob A. Sete, Joshua Yousouf Mutus, Xiqiao Wang
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Abstract
In a general aspect, junction properties of tunnel junctions are altered by voltage-assisted annealing processes. In some cases, a method includes obtaining a circuit comprising a tunnel junction, modifying a junction resistance of the tunnel junction by applying a voltage across the tunnel junction, and obtaining a measured value of the junction resistance. The tunnel junction may include a metal and a metal oxide.
Claims16
A method comprising:
- obtaining a substrate comprising a tunnel junction;
- and
- performing an alternating-bias assisted annealing process on the tunnel junction, comprising applying a sequence of annealing pulses with alternating polarities and measurement pulses on the tunnel junction,
- wherein the alternating-bias assisted annealing process changes one or more properties of the tunnel junction, the one or more properties including the superconducting critical current of the tunnel junction at a cryogenic temperature.
1 more element
Dependencies are inferred from the claim text.