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US 12,514,131 B2Granted
Method for fabricating semiconductor device
AssigneeUnited Microelectronics Corp.
InventorsJia-Rong Wu, Rai-Min Huang, Ya-Huei Tsai, I-Fan Chang, Yu-Ping Wang
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Abstract
A method for fabricating semiconductor device includes the steps of: forming a magnetic tunneling junction (MTJ) stack on a substrate; forming a top electrode on the MTJ stack; performing a first patterning process to remove the MTJ stack along a first direction; and performing a second patterning process to remove the MTJ stack along a second direction to form MTJs on the substrate.
Claims2
A method for fabricating semiconductor device, comprising:
- forming a bottom electrode on a substrate;
- forming a magnetic tunneling junction (MTJ) stack on the bottom electrode;
- forming a stop layer on the MTJ stack;
- forming a top electrode on the stop layer;
- forming a hard mask on the top electrode;
- performing a first patterning process to remove the hard mask and the top electrode along a first direction and stop on the stop layer;
- performing a first etching process to remove the hard mask and the top electrode along a second direction and stop on the stop layer;
- and
- performing a second etching process to remove the stop layer, the MTJ stack, and the bottom electrode to form MTJs on the substrate.
6 more elements
Dependencies are inferred from the claim text.