Magneto-resistive random-access memory (MRAM) devices and methods of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsuan-Yi Peng, Cherng-Yu Wang, Jen-Po Lin, Hsiao-Kuan Wei
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Abstract
Embodiments of the present disclosure provide a magnetic tunnel junction (MTJ) structure for storing a data. In one embodiment, the MJT structure includes a first ferromagnetic layer, a second ferromagnetic layer disposed above the first ferromagnetic layer, a first dielectric layer disposed between and in contact with the first ferromagnetic layer and the second ferromagnetic layer, a plurality of metal particles disposed in contact with the second ferromagnetic layer, wherein the metal particles are distributed in a discrete and non-continuous manner, and a second dielectric layer disposed over the plurality of metal particles.
Claims8
A method of forming a perpendicular magnetic tunnel junction (p-MTJ), comprising:
- forming a first ferromagnetic layer over a substrate, the first ferromagnetic layer having a fixed magnetization oriented in a direction perpendicular to a surface thereof;
- depositing an insulating barrier layer on the first ferromagnetic layer;
- forming a second ferromagnetic layer on the insulating barrier layer, the second ferromagnetic layer having a magnetization that is switchable between a parallel direction and an anti-parallel direction with respect to the fixed magnetization of the first ferromagnetic layer;
- providing a plurality of metal particles on the second ferromagnetic layer, wherein the metal particles are formed of a non-magnetic metal material;
- and
- forming a dielectric layer on the plurality of metal particles such that at least one or more metal particles of the plurality of metal particles are embedded in the dielectric layer.
A method of forming a perpendicular magnetic tunnel junction (p-MTJ), comprising:
- forming a first ferromagnetic layer over an electrode, the first ferromagnetic layer having a fixed magnetization oriented in a direction perpendicular to a surface thereof;
- forming an insulating barrier layer on the first ferromagnetic layer;
- forming an anti-ferromagnetic layer on the insulating barrier layer;
- forming a second ferromagnetic layer on the anti-ferromagnetic layer, the second ferromagnetic layer having a magnetization that is switchable between a parallel direction and an anti-parallel direction with respect to the fixed magnetization of the first ferromagnetic layer;
- sputtering a plurality of metal particles on the second ferromagnetic layer, wherein the plurality of metal particles is formed of a non-magnetic metal material;
- and
- forming a dielectric layer on the plurality of metal particles such that the plurality of metal particles are embedded in the dielectric layer.
Dependencies are inferred from the claim text.