Solid-state imaging device having through electrode provided therein and electronic apparatus incorporating the solid-state imaging device
AssigneeSony Group Corporation
InventorHideaki Togashi
Life of this patent
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Abstract
There is provided a solid-state imaging device including: one or more photoelectric conversion elements provided on side of a first surface of a semiconductor substrate; a through electrode coupled to the one or more photoelectric conversion elements, and provided between the first surface and a second surface of the semiconductor substrate; and an amplifier transistor and a floating diffusion provided on the second surface of the semiconductor substrate, in which the one or more photoelectric conversion elements are coupled to a gate of the amplifier transistor and the floating diffusion via the through electrode.
Claims19
A light detecting device, comprising:
- a first photoelectric conversion element disposed on or above a first surface of a semiconductor substrate;
- a through electrode electrically connected to the first photoelectric conversion element, and at least partially disposed between the first surface and a second surface of the semiconductor substrate;
- an amplifier transistor disposed on or below the second surface the semiconductor substrate;
- a photodiode disposed in the semiconductor substrate,
- wherein the amplifier transistor is electrically connected to the first photoelectric conversion element and the through electrode;
- and
- a first floating diffusion electrically connected to the first photoelectric conversion element and the through electrode.
A light detecting device, comprising:
- a first photoelectric conversion element disposed on or above a first surface of a semiconductor substrate;
- a through electrode electrically connected to the first photoelectric conversion element, and disposed between the first surface and a second surface of the semiconductor substrate;
- a first part of a dielectric region disposed between a first region of the semiconductor substrate and the through electrode in a cross-section view;
- a second part of the dielectric region disposed between a second region of the semiconductor substrate and the through electrode in the cross-section view;
- a second contact,
- wherein the through electrode is coupled to a wiring layer via the second contact;
- a third contact coupled to the through electrode via a connection section in the wiring layer;
- and
- a fourth contact,
- wherein a gate of an amplifier transistor disposed at the second surface of the
- semiconductor substrate is coupled to the through electrode via the fourth contact, the connection section and the second contact.
Dependencies are inferred from the claim text.