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US 12,514,001 B2Granted
Synaptic device and its manufacturing method
AssigneeElectronics and Telecommunications Research Institute
InventorsYong-Duck Chung, Woo Jung Lee, Daehyung Cho, Taeha Hwang
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Abstract
Provided is a method of manufacturing a synaptic device. The method includes forming a first electrode, forming a synaptic mimic layer including a hole transport layer and an electron transport layer on the first electrode, and forming a second electrode on the synaptic mimic layer, wherein the forming of the synaptic mimic layer includes forming the electron transport layer on the hole transport layer through a solution process.
Claims11
A method of manufacturing a synaptic device, the method comprising:
- forming a first electrode;
- forming a synaptic mimic layer;
- and
- forming a second electrode on the synaptic mimic layer,
- wherein the forming of the synaptic mimic layer includes:
- forming a hole transport layer on the first electrode;
- forming an electron transport layer on the hole transport layer through a solution process;
- and
- forming a depletion region in a bond surface between the hole transport layer and the electrode transport layer,
- wherein the electron transport layer includes Zn, O, and S, and the hole transport layer includes Cu, In, and Ga,
- wherein the depletion region includes holes and electrons, and
- wherein electrons of the depletion region are configured to move to the electron transport layer by light energy.
9 more elements
Dependencies are inferred from the claim text.