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US 12,513,917 B2Granted
Method for manufacturing capacitor array, capacitor array, and semiconductor device
AssigneeChangxin Memory Technologies, Inc.
InventorsLiutao Zhou, Shuo Pan
Life of this patent
Estimating the term…
Abstract
A method for manufacturing a capacitor array includes: providing a substrate provided with a device area configured for forming a capacitor and a peripheral area located at a periphery of the device area; forming successively a first support layer and a first sacrificial layer on the substrate; etching the first sacrificial layer of the peripheral area to expose the first support layer, so as to form a first via; and filling the first via to form a support pillar.
Claims12
A method for manufacturing a capacitor array, comprising:
- providing a substrate, provided with a device area configured for forming a capacitor and a peripheral area located at a periphery of the device area;
- forming successively a first support layer and a first sacrificial layer on the substrate;
- etching the first sacrificial layer in the peripheral area to expose the first support layer, so as to form a first via;
- and
- filling the first via to form a support pillar;
- forming successively a second support layer, a second sacrificial layer and a third support layer on the first sacrificial layer, after the support pillar is formed, wherein the second support layer, the second sacrificial layer, and the third support layer form a laminated structure together with the first support layer and the first sacrificial layer;
- and
- etching the laminated structure in the device area to expose the substrate, so as to form second vias;
- forming an electrode layer after the second vias are formed, wherein the electrode layer covers a sidewall and a bottom surface of each of the second vias;
- forming a mask layer on the laminated structure after the electrode layer is formed;
- forming mask openings based on the mask layer;
- and
- removing the first sacrificial layer and the second sacrificial layer in the device area, and the second support layer and the third support layer under the mask openings in the device area, based on the mask openings, wherein the reserved second support layer, the reserved third support layer and the first support layer are connected to an outer wall of a cylindrical structure formed by the electrode layer.
10 more elements
A method for manufacturing a capacitor array, comprising:
- providing a substrate, provided with a device area configured for forming a capacitor and a peripheral area located at a periphery of the device area;
- forming successively a first support layer and a first sacrificial layer on the substrate;
- etching the first sacrificial layer in the peripheral area to expose the first support layer, so as to form a first via;
- and
- filling the first via to form a support pillar;
- forming successively a second support layer, a second sacrificial layer and a third support layer on the first sacrificial layer, after the support pillar is formed, wherein the second support layer, the second sacrificial layer, and the third support layer form a laminated structure together with the first support layer and the first sacrificial layer;
- and
- etching the laminated structure in the device area to expose the substrate, so as to form second vias;
- forming an electrode layer after the second vias are formed, wherein the electrode layer covers a sidewall and a bottom surface of each of the second vias;
- forming a mask layer on the laminated structure after the electrode layer is formed;
- forming mask openings based on the mask layer;
- and
- removing the first sacrificial layer and the second sacrificial layer in the device area, and the second support layer and the third support layer under the mask openings in the device area, based on the mask openings, wherein the reserved second support layer, the reserved third support layer and the first support layer are connected to an outer wall of a cylindrical structure formed by the electrode layer;
- wherein there is a high etching selectivity ratio between a material of the first sacrificial layer and of the second sacrificial layer and a material of the second support layer and of the third support layer.
11 more elements
Dependencies are inferred from the claim text.