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US 12,513,911 B2Granted
Ferroelectrically modulated spin orbit logic device
AssigneeIntel Corporation
InventorsHai Li, Dmitri Evgenievich Nikonov, Chia-Ching Lin, Tanay A Gosavi, Ian Alexander Young
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Abstract
A spin orbit logic (SOL) device includes a first electrically conductive layer; a layer comprising a ferroelectric material (FE layer) on the first electrically conductive layer; a second electrically conductive layer on the FE layer; and a spin orbit coupling (SOC) stack including a first layer (SOC1 layer) including a first SOC material, and a second layer (SOC2 layer) including a second SOC material, the SOC1 layer adjacent the FE layer.
Claims24
A spin orbit logic (SOL) device including:
- a first electrically conductive layer;
- a layer comprising a ferroelectric material (FE layer) on the first electrically conductive layer;
- a second electrically conductive layer on the FE layer, wherein, between the first electrically conductive layer and the second electrically conductive layer, the SOL device does not include a ferromagnetic material and does not include a multiferroic material;
- and
- a spin orbit coupling (SOC) stack including a first layer (SOC1 layer) including a first SOC material, and a second layer (SOC2 layer) including a second SOC material, the SOC1 layer adjacent the FE layer.
2 more elements
An integrated circuit structure comprising:
- a plurality of spin orbit logic (SOL) devices, wherein individual ones of the SOL devices of the plurality of SOL devices include:
- a first electrically conductive layer;
- a layer comprising a ferroelectric material (FE layer) on the first electrically conductive layer;
- a second electrically conductive layer on the FE layer, the first electrically conductive layer and the second electrically conductive layer corresponding to an input of said individual ones of the SOL devices;
- and
- a spin orbit coupling (SOC) stack including a first layer (SOC1 layer) including a first SOC material, and a second layer (SOC2 layer) including a second SOC material, the SOC1 layer adjacent the FE layer, the first SOC material corresponding to an output of said individual ones of the SOL devices;
- and
- a plurality of electrically conductive bridges electrically connecting pairs of the individual ones of the SOL devices to one another by electrically connecting an output of a first SOL device of individual ones of the pairs to an input of a second SOL device of the individual ones of the pairs.
5 more elements
An integrated circuit device assembly including:
- a printed circuit board;
- and
- a plurality of integrated circuit components attached to the printed circuit board, individual ones of the integrated circuit components including one or more integrated circuit dies, individual ones of the dies including:
- a plurality of spin orbit logic (SOL) devices, wherein individual ones of the plurality of SOL devices include:
- a first electrically conductive layer;
- a layer comprising a ferroelectric material (FE layer) on the first electrically conductive layer;
- a second electrically conductive layer on the FE layer, the first electrically conductive layer and the second electrically conductive layer corresponding to an input of said individual ones of the SOL devices;
- and
- a spin orbit coupling (SOC) stack including a first layer (SOC1 layer) including a first SOC material, and a second layer (SOC2 layer) including a second SOC material, the SOC1 layer adjacent the FE layer, the first SOC material corresponding to an output of said individual ones of the SOL devices;
- and
- a plurality of electrically conductive bridges electrically connecting pairs of the individual ones of the SOL devices to one another by electrically connecting an output of a first SOL device of individual ones of the pairs to an input of a second SOL device of the individual ones of the pairs.
8 more elements
Dependencies are inferred from the claim text.