Classification of error rate of data retrieved from memory cells

A method, comprising:

• programming a plurality of memory cells of a device to have a plurality of read voltages configured at a plurality of levels respectively;
• applying to the memory cells, for each respective read voltage, a plurality of test voltages centered at the respective read voltage;
• determining, when each respective test voltage in the plurality of test voltages is applied for the respective read voltage, a count of first memory cells, among the plurality of memory cells, having a predetermined state in response to the respective test voltage;
• and
• determining, based on the count determined for each respective test voltage in the plurality of test voltages being applied for the respective read voltage, a classification of a bit error rate of data retrievable from the plurality of memory cells, wherein the classification is further determined based on signal or noise characteristics of the memory cells measured for multiple read voltages.

A memory sub-system, comprising:

• a processing device;
• and
• at least one memory device, the memory device having:
• a plurality of memory cells configured as a plurality of subgroups;
• and
• a circuit configured to, responsive to a command from the processing device:
• apply to the plurality of subgroups concurrently, for each respective read voltage among a plurality of read voltages configured at a plurality of levels, a plurality of test voltages centered at the respective read voltage;
• determine, when each respective test voltage in the plurality of test voltages is applied to a respective subgroup, a count of first memory cells, within the respective subgroup, having a predetermined state in response to the respective test voltage;
• and
• determine, based on the count of the first memory cells counted within the respective subgroup, a classification of a bit error rate of data retrievable from the plurality of memory cells, wherein the classification is further determined based on signal or noise characteristics of the memory cells measured for multiple read voltages.