System and method for forming radiation hardened circuitry

A semiconductor component comprising:

• a substrate including a plurality of source/drain implants in the form of rows;
• a charge storage structure disposed over the substrate, the charge storage structure comprising at least three continuous layers including a first silicon oxide layer, a silicon nitride layer disposed on the first silicon oxide layer, and a second silicon oxide layer disposed on the silicon nitride layer, wherein the charge storage structure includes two charge storage regions disposed along each gate and between each pair of source/drain implants;
• a plurality of gate structures in the form of columns disposed over the charge structure and extending perpendicular to the rows;
• and
• a radiation protection layer disposed over the charge storage structure and the plurality of gate structures, the radiation protection layer including a radiation resistant material including boron having an isotope composition of at least 90% boron-11.