Semiconductor device
AssigneeRohm Co., Ltd.
InventorsYusuke Yoshii, Yuki Inoue, Hiroyuki Makimoto
Life of this patent
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Abstract
A semiconductor device includes a semiconductor chip that has a main surface, a device region that is demarcated at the main surface, a differential amplifier that is formed in the device region and that amplifies and outputs a differential signal input to the differential amplifier, an insulation layer that covers the device region on the main surface, and a shield electrode that is incorporated in the insulation layer such as to conceal the device region in a plan view and that is fixed to a ground potential.
Claims20
A semiconductor device comprising:
- a semiconductor chip that has a main surface;
- a device region that is demarcated at the main surface;
- an amplifier that is formed in the device region and that amplifies and outputs a differential signal input into the amplifier;
- a multilayer wiring layer in which interlayer insulation layers and wiring layers are alternately laminated, wherein
- the multilayer wiring layer covers the device region on the main surface,
- the multilayer wiring layer includes an uppermost wiring layer of the wiring layers that is arranged on an uppermost insulation layer of the interlayer insulation layers, and
- the multilayer wiring layer has a ground terminal to be fixed to a ground potential;
- a shield electrode that is incorporated in the multilayer wiring layer as a part of the uppermost wiring layer so as to be integrally formed with the ground terminal and conceal the device region in a plan view;
- and
- a protective layer that covers the shield electrode and that has a pad opening that exposes a part of the ground terminal.
A semiconductor device comprising:
- a semiconductor chip that has a main surface;
- a constant current region that is demarcated at the main surface;
- an input region that is demarcated at the main surface;
- a constant current circuit that is formed in the constant current region and that generates a constant current;
- a differential circuit that is formed in the input region, that is electrically connected to the constant current circuit, and that transforms a differential signal input to the differential circuit into a differential current;
- and
- a shield electrode that is arranged on the main surface such as to conceal at least either one of the input region and the constant current region in a plan view and that is fixed to a ground potential.
A semiconductor device comprising:
- a semiconductor chip that has a main surface;
- a device region that is demarcated at the main surface, the device region including an input region, an amplification region, and an output region;
- a differential amplifier that is formed in the device region and that amplifies and outputs a differential signal input into the differential amplifier, the differential amplifier including an input circuit that is formed in the input region and that transforms the differential signal into a differential current, an amplifier circuit that is formed in the amplification region and that amplifies the differential current and generates an amplification current, and an output circuit that is formed in the output region and that generates an output current according to the amplification current;
- and
- a shield electrode that is arranged on the main surface such as to conceal the input region of the device region in a plan view and that is fixed to a ground potential;
- wherein the input circuit includes a differential circuit including a pair of differential transistors forming a differential connection,
- the amplifier circuit includes a current return circuit that forms a cascode connection with the differential circuit and that includes a pair of bias transistors forming a folded cascode circuit with the differential circuit, and
- the output circuit includes a push-pull circuit including a pair of output transistors forming a push-pull connection.
Dependencies are inferred from the claim text.