Plasma processing apparatus and plasma control method using magnetic field
AssigneeSemes Co., Ltd.
InventorsDuk Hyun Son, Dong Mok Lee, Hyung Joon Kim
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Abstract
A plasma processing apparatus using a magnetic field includes a reaction chamber, a plasma generating device connected to the reaction chamber to generate plasma in the reaction chamber, a substrate support disposed in a lower portion in the reaction chamber to support a wafer to be etched by the plasma, and a magnetic module including a permanent magnet and an electromagnet disposed vertically above the reaction chamber and a DC power supply unit connected to the electromagnet to input power to the electromagnet.
Claims15
A plasma processing apparatus using a magnetic field, the plasma processing apparatus comprising:
- a reaction chamber;
- a plasma generator connected to the reaction chamber to generate plasma in the reaction chamber;
- a substrate support disposed in a lower portion in the reaction chamber to support a wafer to be etched by the plasma;
- and
- a magnetic module including a permanent magnet and an electromagnet disposed vertically above the reaction chamber and a DC power supply unit connected to the electromagnet to input power to the electromagnet,
- wherein the permanent magnet is a ring-shaped magnet having a hole therein,
- wherein an outer edge of the permanent magnet excluding the hole is disposed to correspond to an outer edge of a middle region of the wafer seated on the substrate support, and
- wherein the middle region of the wafer is disposed between a center region and an edge region of the wafer;
- wherein the plasma processing apparatus further comprises:
- a signal determiner which determines a power parameter input to the electromagnet according to a difference in coercive force with the permanent magnet in consideration of a target etch rate of the wafer.
A plasma processing apparatus using a magnetic field, the plasma processing apparatus comprising:
- a reaction chamber;
- a plasma generator including a plurality of tubular linear antennas connected to the reaction chamber and installed to be parallel above the reaction chamber and spaced apart from each other to generate plasma in the reaction chamber, and an RF power supply supplying RF power to the antennas to generate plasma in the reaction chamber;
- an electrostatic chuck disposed in a lower portion in the reaction chamber and supporting a wafer to be etched by the plasma;
- a magnetic module including:
- a ring-shaped permanent magnet disposed on an upper plate of the reaction chamber,
- wherein an outer edge of the permanent magnet is configured to correspond to an edge of a middle region of the wafer,
- wherein the middle region of the wafer is disposed between a center region and an edge region of the wafer, and
- wherein the permanent magnet is configured to adjust an etch rate in the middle region of the wafer,
- an electromagnet disposed to be perpendicular to the permanent magnet, and
- a DC power supply unit connected to the electromagnet and inputting power to the electromagnet;
- and
- a signal determiner determining current or voltage input to the electromagnet according to a difference in coercive force with the permanent magnet in consideration of a target etch rate of the wafer.
Dependencies are inferred from the claim text.