Memory device performing target refresh operation and operating method thereof
AssigneeSK hynix Inc.
InventorJung Taek You
Life of this patent
Estimating the term…
Abstract
A memory device includes: a memory cell region including normal cells coupled to normal column selection lines, and row-hammer cells and redundancy cells respectively coupled to redundancy column selection lines; a repair control circuit configured to provide repair addresses and row-hammer flag signals, corresponding to repair information, according to a row address; and a column control circuit configured to activate at least one of the redundancy column selection lines according to the row-hammer flag signals or a comparison result of a column address and the repair addresses.
Claims15
A memory device comprising:
- a memory cell region including normal cells coupled to normal column selection lines, and row-hammer cells and redundancy cells respectively coupled to redundancy column selection lines;
- a repair control circuit configured to provide repair addresses and row-hammer flag signals, corresponding to repair information, according to a row address, wherein the repair control circuit is configured to store the repair addresses respectively corresponding to the redundancy column selection lines based on the repair information during boot-up, while setting a corresponding row-hammer flag signal without storing a repair address corresponding to an unused redundancy column selection line;
- and
- a column control circuit configured to activate at least one of the redundancy column selection lines according to the row-hammer flag signals or a comparison result of a column address and the repair addresses.
An operating method of a memory device, the operating method comprising:
- outputting repair information stored in a nonvolatile storage device as fuse array data according to a fuse address during boot-up;
- providing the fuse array data as a plurality of fuse data items and a plurality of flag data items according to the fuse address, while activating the flag data items and masking the fuse array data when it is detected that the fuse array data includes unused data;
- and
- respectively storing the plurality of fuse data items and the plurality of flag data items in a plurality of latch circuits.
Dependencies are inferred from the claim text.