Method and system for repairing a dynamic random access memory (dram) of memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsNidhi Shukla, Preeti Joseph, Hyunbum Cho, Yongjae Shin
Life of this patent
Estimating the term…
Loading patent…
AssigneeSamsung Electronics Co., Ltd.
InventorsNidhi Shukla, Preeti Joseph, Hyunbum Cho, Yongjae Shin
Estimating the term…
Various example embodiments are directed to a method, device, and system for repairing a Dynamic Random Access Memory (DRAM) memory device. The method includes reserving a memory space within the DRAM memory device, the reserved memory space including a plurality of spare rows, identifying one or more faulty rows within the DRAM memory device using at least one memory testing method, updating an error information table based on information of a respective classified correctable faulty row, in response to an error count for the respective classified correctable faulty row exceeding a desired threshold value, mapping the respective classified correctable faulty row to an available spare row of the plurality of spare rows, storing the mapping of the respective correctable faulty row and the mapped spare row in a row repair translation table, and copying data stored in the respective correctable faulty row into the mapped spare row.
A method of repairing a Dynamic Random Access Memory (DRAM) memory device, the method comprising:
A system for repairing a Dynamic Random Access Memory (DRAM) memory device, the system comprising:
A non-transitory computer readable media for repairing a Dynamic Random Access Memory (DRAM) memory device, the non-transitory computer readable media comprising one or more computer readable instructions which, when executed by at least one processor, causes the at least one processor to:
Dependencies are inferred from the claim text.