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US 12,510,582 B2Granted
Semiconductor device
AssigneeFuji Electric Co., Ltd.
InventorYuki Kumazawa
Life of this patent
Estimating the term…
Abstract
A semiconductor device, including: a power semiconductor element having a current output electrode; a wire bonded to the current output electrode; and a degradation detection circuit configured to monitor a temporal change of a voltage value of the wire while a constant current flows through the wire, responsive to satisfaction of a plurality of conditions including that the power semiconductor element is in a turn-off state, and that a temperature of the power semiconductor element is within a predetermined temperature range.
Claims8
A semiconductor device, comprising:
- a power semiconductor element having a current output electrode;
- a wire bonded to the current output electrode;
- a current detection circuit connected to the power semiconductor element, the current detection circuit having an output terminal that outputs a current non-detection signal while no current flows through the power semiconductor element;
- a temperature detection circuit having an output terminal that outputs a normal temperature detection signal while a temperature of the power semiconductor element is within a predetermined temperature range;
- and
- a degradation detection circuit, including a logic circuit having two input terminals, respectively connected to the output terminal of the current detection circuit and the output terminal of the temperature detection circuit, the logic circuit being configured to determine satisfaction of a plurality of conditions, including
- that the power semiconductor element is in a turn-off state, and
- that the temperature of the power semiconductor element is within the predetermined temperature range,
- upon receiving the current non-detection signal and the normal temperature detection signal, so that the degradation detection circuit monitors a temporal change of a voltage value of the wire while a constant current flows through the wire, responsive to the satisfaction of the plurality of conditions.
6 more elements
A semiconductor device, comprising:
- a power semiconductor element having a current output electrode and a gate;
- a wire bonded to the current output electrode;
- a drive circuit having an output terminal, the drive circuit generating a gate voltage value for driving the power semiconductor element and outputting the gate voltage value via the output terminal thereof to the gate of the power semiconductor element;
- a temperature detection circuit having an output terminal that outputs a normal temperature detection signal while a temperature of the power semiconductor element is within a predetermined temperature range;
- and
- a degradation detection circuit, including a logic circuit having two input terminals, respectively connected to the output terminal of the drive circuit and the output terminal of the temperature detection circuit, the logic circuit determining satisfaction of a plurality of conditions, including
- that the power semiconductor element is in a turn-off state, and
- that the temperature of the power semiconductor element is within the predetermined temperature range,
- responsive to the gate voltage value being less than a threshold level of the power semiconductor element and upon receiving the normal temperature detection signal, so that the degradation detection circuit monitors a temporal change of a voltage value of the wire while a constant current flows through the wire, responsive to the satisfaction of the plurality of conditions.
6 more elements
A semiconductor device, comprising:
- a power semiconductor element having a current output electrode;
- a wire bonded to the current output electrode;
- a control terminal for receiving a gate drive signal for driving the power semiconductor element;
- a temperature detection circuit having an output terminal that outputs a normal temperature detection signal while a temperature of the power semiconductor element is within a predetermined temperature range;
- and
- a degradation detection circuit, including a logic circuit having two input terminals, respectively connected to the control terminal, and to the output terminal of the temperature detection circuit, the logic circuit determining satisfaction of a plurality of conditions, including
- that the power semiconductor element is in a turn-off state, and
- that the temperature of the power semiconductor element is within the predetermined temperature range,
- upon receiving the normal temperature detection signal without receiving the gate drive signal, so that the degradation detection circuit monitors a temporal change of a voltage value of the wire while a constant current flows through the wire, responsive to the satisfaction of the plurality of conditions.
6 more elements
Dependencies are inferred from the claim text.