Quartz glass crucible, manufacturing method therefor, and method for manufacturing silicon single crystal

A quartz glass crucible for pulling a silicon single crystal, the quartz glass crucible comprising:

• a crucible main body made of silica glass;
• and
• a crystallization accelerator-containing layer provided on an outer surface of the crucible main body,
• wherein the crucible main body includes, from an inner surface side toward an outer surface side of the crucible, an inner transparent layer containing no bubbles, a bubble layer containing bubbles and provided outside of the inner transparent layer, and an outer transparent layer provided outside of the bubble layer,
• an outer transition layer where a bubble content decreases from the bubble layer toward the outer transparent layer is provided at a boundary between the outer transparent layer and the bubble layer,
• a thickness of the outer transition layer is 0.1 mm or more and 8 mm or less,
• a bubble content of the bubble layer is 1 to 4 vol %,
• a bubble content of the outer transparent layer is 0.1 vol % or less,
• in a case where an average bubble content of the outer transparent layer is 0 and an average bubble content of the bubble layer is 1, an average bubble content of the outer transition layer is from 0.1 to 0.7,
• the crystallization accelerator-containing layer contains a crystallization accelerator, and
• the crystallization accelerator-containing layer is a layer applied to the outer surface of the crucible main body and formed directly on an outside of the outer transparent layer.