Method of manufacturing semiconductor device, substrate processing apparatus and evaporation system

A substrate processing method, comprising:

• (a) supplying a source material comprising a metal to an evaporator, and generating a gas and a mist from the source material by evaporating the source material;
• (b) supplying the gas and the mist to a mist filter to convert the mist into a gaseous state, wherein the mist filter is installed separately from the evaporator and a gas pipe heated by the evaporator and a first heater is interposed between the mist filter and the evaporator, the mist filter comprising:
• a second heater, and
• a stacked structure a stacked structure formed by a plurality of first plates and a plurality of second plates being alternately engaged with each other at outer circumferential sections thereof,
• wherein each of the plurality of first plates comprise a first plate section provided with a first hole and a first outer circumferential section disposed at a position offset with respect to the first plate section, and the first plate section and the first outer circumferential section are integrated as a single body,
• wherein each of the plurality of second plates comprise a second plate section provided with a second hole disposed at a position different from that of the first hole and a second outer circumferential section disposed at a position offset with respect to the second plate section, and the second plate section and the second outer circumferential section are integrated as a single body, and
• wherein a length of the cylindrical stacked structure measured along a stacking direction is greater than an outer diameter thereof;
• (c) supplying the gas from the mist filter into a gas filter to collect a particle generated in at least one of the evaporator or the mist filter;
• (d) supplying the gas from the gas filter to a process chamber to form a layer comprising the metal on a substrate;
• and
• (e) after performing (a) and before performing (b), allowing the mist to flow through the gas pipe such that a flow velocity of the mist increases from an outlet side of the evaporator through the gas pipe toward the mist filter during a fore flow period in which the source material passes through the gas pipe,
• wherein the mist filter is provided between a flow rate controller installed at the gas pipe and the evaporator, and
• wherein during the fore flow period the flow rate controller controls the flow velocity of the mist through the gas pipe.