Thin-film forming raw material used in atomic layer deposition method, and method of producing thin-film

A method of producing a thin-film containing an yttrium atom on a surface of a substrate by an atomic layer deposition method,

• the method comprising the steps of:
• causing a yttrium compound in a raw material gas, which is obtained by vaporizing a thin-film forming raw material, which is used in the atomic layer deposition method, to adsorb to the surface of the substrate to form a precursor thin-film;
• and
• causing the precursor thin-film to react with a reactive gas in a temperature range of from 200° C. to 400° C. to form the thin-film containing an yttrium atom on the surface of the substrate,
• wherein the reactive gas is an oxidizing gas containing ozone, oxygen, or water vapor, and
• wherein the thin-film forming raw material, which is used in the atomic layer deposition method, comprises the yttrium compound, and the yttrium compound is represented by the following general formula (1):
• wherein R1 represents a heptan-2-yl group or a heptan-3-yl group, R2 represents a tertiary alkyl group having 4 carbon atoms, and R3 represents a hydrogen atom.