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US 12,509,355 B2Granted
YAG sintered body, method for producing the same, semiconductor manufacturing equipment member, and gas nozzle
AssigneeNiterra Co., Ltd.
InventorAtsushi Tsuchida
Life of this patent
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Abstract
A YAG sintered body has a predetermined surface where intragranular pores are exposed. On the predetermined surface, arithmetic average roughness Ra satisfies Ra≤0.5 μm, and a ratio between maximum height Rz and maximum valley depth Rv satisfies Rv/Rz≤0.7. With this configuration, the predetermined surface of a processed surface is smoothed to have improved plasma resistance and exhibit a particle-suppressing effect.
Claims12
A YAG sintered body comprising a predetermined surface where intragranular pores are exposed,
- wherein, on the predetermined surface, arithmetic average roughness Ra satisfies Ra≤0.5 μm, and a ratio between maximum height Rz and maximum valley depth Rv satisfies Rv/Rz≤0.7.
Dependencies are inferred from the claim text.