Magnetoresistance effect element with layers containing crystallized Co Heusler alloy
AssigneeTDK Corporation
InventorsShinto Ichikawa, Kazuumi Inubushi, Katsuyuki Nakada
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Abstract
A magnetoresistance effect element includes: a first ferromagnetic layer, a second ferromagnetic layer; and a non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, wherein at least one of the first ferromagnetic layer and the second ferromagnetic layer includes a first layer and a second layer in order from the side closer to the non-magnetic layer, the first layer contains a crystallized Co Heusler alloy, and at least a part of the second layer is crystallized and the second layer contains a ferromagnetic element and elemental boron.
Claims10
A magnetoresistance effect element comprising:
- a first ferromagnetic layer;
- a second ferromagnetic layer;
- and
- a non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer,
- wherein at least one of the first ferromagnetic layer and the second ferromagnetic layer includes a first layer and a second layer in order from the side closer to the non-magnetic layer,
- wherein the first layer contains a crystallized Co Heusler alloy,
- wherein at least a part of the second layer is crystallized and the second layer contains a ferromagnetic element and elemental boron, and
- wherein both the first ferromagnetic layer and the second ferromagnetic layer include the first layer and the second layer.
Dependencies are inferred from the claim text.