Semiconductor device and manufacturing method

A semiconductor device, comprising:

• a substrate;
• at least one transistor over the substrate;
• a redistribution structure over and electrically coupled to the at least one transistor;
• a semiconductor material over the redistribution structure, and comprising a plurality of first fingers and a plurality of second fingers,
• wherein the plurality of first fingers and the plurality of second fingers are interdigitated with each other to configure a capacitor having a comb structure;
• a conductive through via extending through the semiconductor material and electrically coupled to the redistribution structure;
• a first contact structure over the semiconductor material and electrically coupling the conductive through via to the plurality of first fingers of the capacitor;
• and
• a doped region in a portion of the semiconductor material, said portion continuous to the plurality of first fingers, wherein the first contact structure is in ohmic contact with the doped region.

A semiconductor device, comprising:

• a substrate comprising a semiconductor material;
• and
• a passive circuit comprising at least a first circuit element and a second circuit element which are electrically coupled to each other by a section of the semiconductor material,
• wherein
• the first circuit element is one of a Schottky diode, a capacitor, and a resistor,
• the second circuit element is a different one of the Schottky diode, the capacitor, and the resistor,
• the Schottky diode comprises a contact structure and a doped region of the semiconductor material, the doped region in Schottky contact with and extending around the contact structure,
• the capacitor comprises a plurality of interdigitated fingers of the semiconductor material, the plurality of interdigitated fingers configuring electrodes of the capacitor, and
• the resistor comprises a strip of the semiconductor material, the strip having a meandering shape.