Light emitting device and method of manufacturing light emitting device
AssigneeSony Semiconductor Solutions Corporation
InventorTakahiro Arakida
Life of this patent
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Abstract
A light emitting device according to an embodiment of the present disclosure includes: a semi-insulating substrate having a first surface and a second surface that are opposed to each other; a first semiconductor layer that is stacked on the first surface of the semi-insulating substrate and has a lattice plane non-continuous to the semi-insulating substrate; and a semiconductor stacked body that is stacked above the first surface of the semi-insulating substrate with the semiconductor layer interposed in between. The first semiconductor layer has a first electrical conduction type. The semiconductor stacked body has a light emitting region configured to emit laser light.
Claims18
A light emitting device comprising:
- a semi-insulating substrate having a first surface and a second surface that are opposed to each other;
- a first semiconductor layer that is stacked on the first surface of the semi-insulating substrate and has a lattice plane non-continuous to the semi-insulating substrate, the first semiconductor layer having a first electrical conduction type;
- and
- a semiconductor stacked body that is stacked above the first surface of the semi-insulating substrate with the first semiconductor layer interposed in between, the semiconductor stacked body having a light emitting region configured to emit laser light.
A method of manufacturing a light emitting device, the method comprising
- bonding a semi-insulating substrate and a semiconductor stacked body with a first semiconductor layer interposed in between, the semi-insulating substrate having a first surface and a second surface that are opposed to each other, the semiconductor stacked body having a light emitting region configured to emit laser light, the first semiconductor layer having a first electrical conduction type;
- joining the first surface of the semi-insulating substrate and another surface of the first semiconductor layer opposite to a surface on which the semiconductor stacked body is located;
- and
- joining the first surface of the semi-insulating substrate and the other surface of the first semiconductor layer after growing a second light reflecting layer, an active layer, and a first light reflecting layer and the first semiconductor layer in this order on a semiconductor substrate having the first electrical conduction type or a second electrical conduction type different from the first electrical conduction type.
Dependencies are inferred from the claim text.