Laser diode and method for manufacturing the same

A laser diode, comprising:

• a substrate having a first surface and a second surface that are opposite to each other;
• an epitaxial structure that is disposed on said first surface of said substrate and that is formed with a ridge structure on a side of said epitaxial structure opposite to said substrate, said ridge structure having a first side portion and a second side portion extending transversely to said first side portion, said second side portion being shorter than said first side portion;
• an optical cladding layer including a first cladding portion which covers side walls of said ridge structure, and a second cladding portion which is disposed on a portion of a top surface of said ridge structure and which includes an edge section having
• a first edge region disposed on said first side portion of said ridge structure, and
• a second edge region that is disposed on the second side portion of said ridge structure, and that has a first planar surface opposite to said ridge structure, and a second planar surface transverse to the first planar surface and the first cladding portion, said first planar surface and said second planar surface being connected to each other;
• and
• an electrode contacting layer disposed between said top surface of said ridge structure and a portion of said optical cladding layer;
• wherein said second cladding portion further includes a middle section which is spaced apart from and surrounded by said edge section, and which is configured as a plurality of island structures that are spaced apart from each other, and
• wherein said electrode contacting layer is formed with a plurality of through holes to expose said top surface of said ridge structure, said island structures being filled in said through holes.