Surface light-emission type semiconductor light-emitting device

A surface light-emission type semiconductor light-emitting device, the device comprising:

• a first semiconductor layer;
• a light-emitting layer provided on the first semiconductor layer;
• a second semiconductor layer provided on the light-emitting layer;
• an uneven structure provided on the second semiconductor layer, the uneven structure including a protrusion and a recess next to the protrusion;
• a third semiconductor layer provided on the second semiconductor layer, the uneven structure being provided in the third semiconductor layer;
• a first metal layer covering the uneven structure;
• a second metal layer provided between the uneven structure and the first metal layer, the second metal layer being provided on a bottom surface of the recess and not provided on an upper surface of the protrusion;
• a substrate;
• and
• a first electrode, wherein
• a reflectance of the second metal layer for light radiated from the light-emitting layer is less than a reflectance of the first metal layer for the light,
• at least a part of the substrate is provided on the first electrode,
• the first semiconductor layer is provided on the substrate,
• the first semiconductor layer includes a first part and a second part,
• the first part defines a mesa structure,
• the light-emitting layer is provided on the first part, and is not provided on the second part,
• the first electrode is electrically connected to the substrate, and
• the substrate is configured to cause the light radiated from the light-emitting layer to pass through the substrate.