Semiconductor package including stress buffers and methods of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsPo-Chen Lai, Ming-Chih Yew, Chin-Hua Wang, Shin-Puu Jeng
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Abstract
A semiconductor package includes a package substrate; a semiconductor die vertically stacked on the package substrate; a redistribution layer (RDL) including a dielectric material and metal features that electrically connect the semiconductor die to the package substrate, the RDL having a first Young's modulus; a first underfill layer disposed between the RDL and the semiconductor die; and stress buffers embedded in the RDL below corners of the semiconductor die, each stress buffer having a second Youngs modulus that is at least 30% less than the first Youngs modulus.
Claims20
A semiconductor package comprising:
- a package substrate comprising redistribution structures configured to electrically connect the semiconductor package to a supporting substrate;
- a semiconductor device vertically stacked on the package substrate;
- an interposer comprising a dielectric material and metal features that electrically connect the semiconductor device to the package substrate, the dielectric material of the interposer having a first Young's modulus;
- a first underfill layer disposed between the interposer and the semiconductor device;
- and
- a stress buffer embedded in the interposer below a corner of the semiconductor device in a top view and directly contacting the first underfill layer, the stress buffer having a second Young's modulus that is at least 30% less than the first Young's modulus.
A semiconductor package comprising:
- a package substrate comprising redistribution structures configured to electrically connect the semiconductor package to a supporting substrate;
- a semiconductor die vertically stacked on the package substrate;
- a redistribution layer (RDL) comprising a dielectric material and metal features that electrically connect the semiconductor die to the package substrate, the RDL having a first Young's modulus;
- a first underfill layer disposed between the RDL and the semiconductor die;
- and
- a stress buffer embedded in a top surface of the RDL below a corner of the semiconductor die in a top view and directly contacting the first underfill layer, the stress buffer having a second Young's modulus that is at least 30% less than the first Young's modulus.
A semiconductor package comprising:
- a package substrate comprising redistribution structures configured to electrically connect the semiconductor package to a supporting substrate;
- a first semiconductor device and a second semiconductor device disposed on the package substrate;
- a first underfill layer disposed under the first and second semiconductor devices;
- an interposer disposed under the first underfill layer and comprising a dielectric material and metal features that electrically connect the first semiconductor device and the second semiconductor device to the package substrate, the dielectric material having a first Young's modulus;
- and
- stress buffers embedded in the interposer below first and second corners of at least one of the first semiconductor device or the second semiconductor device in a top view and directly contacting the first underfill layer, the stress buffers having a second Young's modulus that is at least 30% less than the first Young's modulus.
Dependencies are inferred from the claim text.