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AssigneeSanDisk Technologies LLC
InventorsYi Wu, Junrong Yan, Zhonghua Qian, Keming Zhou, Kailei Zhang
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A method includes the step of thinning a semiconductor wafer by a horizontal stealth lasing process, and semiconductor wafers, dies and devices formed thereby. After formation of an integrated circuit layer on a semiconductor wafer, the wafer may be thinned by supporting an active surface of the wafer on a rotating chuck, and focusing a horizontally-oriented laser in multiple cycles at different radii within the rotating wafer. Upon completion of the multiple cycles, a portion of the wafer substrate may be removed, leaving the wafer thinned to its final thickness. Thereafter, a vertical stealth lasing process may be performed to cut individual semicondcutor dies from the thinned wafer.
A method of separating a semiconductor die from a wafer comprising a plurality of semiconductor dies, the wafer comprising a first major planar surface, a second major planar surface and an outer edge extending between the first and second major planar surfaces, wherein each die comprises a plurality of integrated circuits formed in the first major planar surface of the wafer, the method comprising:
A method of separating a semiconductor die from a wafer comprising a plurality of semiconductor dies, the wafer comprising a first major planar surface, a second major planar surface and an outer edge extending between the first and second major planar surfaces, wherein each die comprises a plurality of integrated circuits formed in the first major planar surface of the wafer, the method comprising:
Dependencies are inferred from the claim text.