Plasma-enhanced chemical vapor deposition for structurally-complex substrates
OwnerAustin Loinventor
Life of this patent
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Abstract
A substrate includes a first outer surface, a second outer surface opposite the first outer surface, and a region having a volume extending from the first outer surface to the second outer surface. At least a portion of the volume of this region defines a cavity of an interstitial site where the interstitial site is defined by a wall having a surface and the surface includes a plasma-formed deposition layer.
Claims18
A method of depositing a material on a substrate having a first outer surface, a second outer surface opposite the first outer surface, and a thickness extending between the first outer surface and the second outer surface, wherein the substrate includes a charge-neutral ion deposition state within a volume of the thickness, the method comprising:
- doping the substrate with plasma to generate a charged ion deposition state for the substrate, the charged ion deposition state having a non-zero electric field within the volume of the thickness;
- and
- depositing ions on the substrate doped with plasma at one or more interstitial sites within the volume of the thickness,
- wherein doping the substrate with plasma includes exposing the substrate to nuclear radiation.
A substrate comprising:
- a first outer surface;
- a second outer surface opposite the first outer surface;
- and
- a region having a volume extending from the first outer surface to the second outer surface, wherein at least a portion of the volume defines a cavity of an interstitial site, the interstitial site defined by a wall having a surface, the surface including a plasma-formed deposition layer,
- wherein the plasma-formed deposition layer is formed by a plasma disposed within the cavity, the plasma having an ionization state initiated by gamma radiation.
A system comprising:
- a chamber having a source gas input port and an exhaust gas outlet port;
- an electrode electrically coupled to a voltage source;
- and
- a plasma-doped substrate facing the electrode,
- wherein the plasma-doped substrate includes:
- a first outer surface;
- a second outer surface opposite the first outer surface;
- a region having a volume extending from the first outer surface to the second outer surface, wherein at least a portion of the volume defines a cavity of an interstitial site;
- and
- a plasma disposed within the cavity,
- wherein gamma radiation initiates an ionized state defining the plasma.
A method of depositing a material on a substrate having a first outer surface, a second outer surface opposite the first outer surface, and a thickness extending between the first outer surface and the second outer surface, wherein the substrate includes a charge-neutral ion deposition state within a volume of the thickness, the method comprising:
- doping the substrate with plasma to generate a charged ion deposition state for the substrate, the charged ion deposition state having a non-zero electric field within the volume of the thickness;
- and
- depositing ions on the substrate doped with plasma at one or more interstitial sites within the volume of the thickness,
- wherein, in the charged ion deposition state, the substrate is in a state of radioactive decay.
A method of depositing a material on a substrate having a first outer surface, a second outer surface opposite the first outer surface, and a thickness extending between the first outer surface and the second outer surface, wherein the substrate includes a charge-neutral ion deposition state within a volume of the thickness, the method comprising:
- doping the substrate with plasma to generate a charged ion deposition state for the substrate, the charged ion deposition state having a non-zero electric field within the volume of the thickness;
- and
- depositing ions on the substrate doped with plasma at one or more interstitial sites within the volume of the thickness, wherein:
- depositing ions on the substrate doped with plasma occurs within a plasma-enhanced chemical deposition reactor;
- and
- doping the substrate with plasma to generate a charged ion deposition state occurs external to the plasma-enhanced chemical deposition reactor.
Dependencies are inferred from the claim text.