Extreme ultraviolet light generation chamber device and electronic device manufacturing method

An electronic device manufacturing method comprising:

• outputting extreme ultraviolet light generated using an extreme ultraviolet light generation apparatus to an exposure apparatus;
• and
• exposing a photosensitive substrate to the extreme ultraviolet light in the exposure apparatus to manufacture an electronic device,
• the extreme ultraviolet light generation apparatus including an extreme ultraviolet light generation chamber device including:
• a chamber configured to generate, at an internal space thereof, the extreme ultraviolet light by irradiating a droplet target of tin with laser light to turn the droplet target into plasma;
• a partition wall having a cylindrical shape arranged at the internal space, the partition wall defining a first space outside the partition wall in the internal space and a second space including a plasma generation region where the droplet target turns into plasma and surrounded by the partition wall, the partition wall including a first opening and a second opening that communicate the first space with the second space;
• a target supply unit configured to supply the droplet target into the plasma generation region through the second opening;
• an extreme ultraviolet light concentrating mirror arranged in the first space and including a reflection surface which reflects the extreme ultraviolet light generated in the plasma generation region and incident through the first opening;
• a first etching gas supply unit configured to supply an etching gas containing a hydrogen gas to the reflection surface from the first space having a flow velocity at the reflection surface variable;
• a data generation unit configured to generate data reflecting reflectance of the extreme ultraviolet light concentrating mirror;
• and
• a processor configured to control the first etching gas supply unit to decrease the flow velocity and increase a hydrogen radical density on the reflection surface when the data indicates that an amount of decrease in the reflectance is equal to or more than a reference value.

An electronic device manufacturing method comprising:

• inspecting a defect of a mask by irradiating the mask with extreme ultraviolet light generated using an extreme ultraviolet light generation apparatus;
• selecting a mask using a result of the inspecting;
• and
• exposing and transferring a pattern formed on the selected mask onto a photosensitive substrate,
• the extreme ultraviolet light generation apparatus including an extreme ultraviolet light generation chamber device including:
• a chamber configured to generate, at an internal space thereof, extreme ultraviolet light by irradiating a droplet target of tin with laser light to turn the droplet target into plasma;
• a partition wall having a cylindrical shape arranged at the internal space, the partition wall defining a first space outside the partition wall in the internal space and a second space including a plasma generation region where the droplet target turns into plasma and surrounded by the partition wall, the partition wall including a first opening and a second opening that communicate the first space with the second space;
• a target supply unit configured to supply the droplet target into the plasma generation region through the second opening;
• an extreme ultraviolet light concentrating mirror arranged in the first space and including a reflection surface which reflects the extreme ultraviolet light generated in the plasma generation region and incident through the first opening;
• a first etching gas supply unit configured to supply an etching gas containing a hydrogen gas to the reflection surface from the first space having a flow velocity at the reflection surface variable;
• a data generation unit configured to generate data reflecting reflectance of the extreme ultraviolet light concentrating mirror;
• and
• a processor configured to control the first etching gas supply unit to decrease the flow velocity and increase a hydrogen radical density on the reflection surface when the data indicates that an amount of decrease in the reflectance is equal to or more than a reference value.