US 12,504,384 B2Granted

Wafer defect inspection system

AssigneeSyntec Resources Co., Ltd.

InventorsKang-Feng Fan, Ping-Chun Chang

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Abstract

A wafer defect inspection system is disclosed, and comprises a line light source, a camera and a processor, wherein the processor is configured to control the line light source to provide an inspection light to be incident on a wafer, wherein an included angle between the inspection light and the surface of the wafer ranges from 45° to 90°. After incidence on the wafer, the inspection light travels inside the wafer according to the principle of total reflection, and when encountering a crack, part of the inspection light exits from the surface of the wafer through the crack. Moreover, the processor controls the camera to obtain a wafer image containing at least one defect feature, and after processing the wafer image into an inspection wafer image, compares the wafer image with a reference wafer image, so as to know the at least one defect feature.

Claims9

Dependent claims

A wafer defect inspection system, comprising:

a light source adjusting mechanism;
a line light source, being pivotally connected to the light source adjusting mechanism;
a camera arranged above the wafer and facing the wafer;
and
an electronic device, being coupled to the light source adjusting mechanism, the camera and the line light source;
wherein the electronic device comprises a processor and a memory storing an application program, such that the processor executes the application program so as to be configured to:
provide, by controlling the line light source, an inspection light to be incident on an edge surface of the wafer at an included angle;
pivot, by controlling the light source adjusting mechanism, the line light source so as to adjust the included angle, thereby causing the inspection light to travel inside the wafer according to the principle of total internal reflection;
wherein, when encountering a crack in the wafer, a portion of the inspection light exits from a surface of the wafer through the crack;
acquire, by controlling the camera, a wafer image containing at least one defect pattern from the wafer;
wherein the inspection light exits from a defect position on a surface of the wafer, and the defect pattern in the wafer image corresponds to the defect position;
and
compare, the wafer image with a reference wafer image so as to identify the at least one defect patter;
wherein a rod lens is arranged between the line light source and the wafer, and located on an optical path of the inspection light, so as to enhance an illumination of the inspection light;
wherein an optical device is arranged between the line light source and the rod lens, and configured to guide the inspection light such that the inspection light vertically enters the rod lens;
and
wherein the optical device is selected from the group consisting of a reflector and a polariscope.

14 more elements

A wafer defect inspection system, comprising:

a light source adjusting mechanism;
a line light source, being pivotally connected to the light source adjusting mechanism;
a camera arranged above the wafer and facing the wafer;
and
an electronic device, being coupled to the light source adjusting mechanism, the camera and the line light source;
wherein the electronic device comprises a processor and a memory storing an application program, such that the processor executes the application program so as to be configured to:
provide, by controlling the line light source, an inspection light to be incident on an edge surface of the wafer at an included angle;
pivot, by controlling the light source adjusting mechanism, the line light source so as to adjust the included angle, thereby causing the inspection light to travel inside the wafer according to the principle of total internal reflection;
wherein, under a condition that impurity particles and/or etching residues exist on a top surface of the wafer, the inspection light emitted from the top surface is blocked by the impurity particles and/or the etching residues;
acquire, by controlling the camera, a wafer image containing at least one defect pattern from the wafer;
wherein the inspection light is blocked at a defect position on the top surface, and the defect feature in the wafer image corresponds to the defect position;
and
compare, the wafer image with a reference wafer image so as to identify the at least one defect patter;
wherein a rod lens is arranged between the line light source and the wafer, and located on an optical path of the inspection light, so as to enhance an illumination of the inspection light;
wherein an optical device is arranged between the line light source and the rod lens, and configured to guide the inspection light such that the inspection light vertically enters the rod lens;
and
wherein the optical device is selected from the group consisting of a reflector and a polariscope.

14 more elements

Dependencies are inferred from the claim text.

Facts

Application: 18/240,365Filed 31 Aug 2023
Priority: TW 1121291853 Aug 2023
Published: US 2025/0044241 A16 Feb 2025
Granted: 23 Dec 2025
Term ends: Not estimatedThe source records don’t support an estimate.

Classification10 codes

G01N 21/9505
Semiconductor wafers: wafer internal defects, e.g. microcracks
G01N 21/8806
Investigating the presence of flaws or contamination: specially adapted optical and illumination features
G01N 21/8851
Investigating the presence of flaws or contamination: scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment,…
G01N 21/9501
Characterised by the material or shape of the object to be examined: semiconductor wafers