Pressure detection device and manufacturing method
AssigneeFuji Electric Co., Ltd.
InventorsYuichi Ito, Mutsuo Nishikawa
Life of this patent
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Abstract
Provided is a pressure detection device including: a semiconductor substrate having an upper surface; a bulk region of a first conductivity type provided in the semiconductor substrate; a piezo-resistive region of the first conductivity type provided between the bulk region and the upper surface of the semiconductor substrate; a first well region of a second conductivity type provided between the piezo-resistive region and the bulk region; and a first low-concentration region of the second conductivity type provided between the first well region and the bulk region and having a lower concentration than the first well region.
Claims20
A pressure detection device comprising:
- a semiconductor substrate having an upper surface;
- a bulk region of a first conductivity type provided in the semiconductor substrate;
- a piezo-resistive region of the first conductivity type provided between the bulk region and the upper surface of the semiconductor substrate;
- a first well region of a second conductivity type provided between the piezo-resistive region and the bulk region;
- and
- a first low-concentration region of the second conductivity type provided between the first well region and the bulk region and having a lower concentration than the first well region.
A manufacturing method of a pressure detection device, wherein
- the pressure detection device includes:
- a semiconductor substrate having an upper surface and a lower surface;
- a bulk region of a first conductivity type provided in the semiconductor substrate;
- a piezo-resistive region of the first conductivity type provided between the bulk region and the upper surface of the semiconductor substrate;
- a first well region of a second conductivity type provided between the piezo-resistive region and the bulk region;
- and
- a first low-concentration region of the second conductivity type provided between the first well region and the bulk region and having a lower concentration than the first well region, and
- the first well region and the first low-concentration region are formed by separately implanting ions into each of a position where the first well region is to be formed and a position where the first low-concentration region is to be formed.
Dependencies are inferred from the claim text.