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US 12,503,760 B2Granted
Methods of using high-purity alkynes for selective deposition
AssigneesMerck Patent GmbH, Sigma-Aldrich Co., Versum Materials US, LLC
InventorsChristopher R. Clough, Christopher Jay Thode, Christopher David Hopkins, Sergei V. Ivanov, Agnes Derecskei
Life of this patent
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Abstract
Methods of using high-purity alkynes substantially free of residual alkyl halides, water and/or carboxylic acids and their use (e.g., in formulations) for enhanced passivation of metallic substrates.
Claims18
A method for forming a metal-containing film via a chemical vapor deposition (CVD) process comprising:
- a. providing at least one substrate in a reaction vessel;
- b. forming at least one passivated surface by exposing at least one surface of the at least one substrate to one or more high-purity alkynes or a formulation thereof, wherein the one or more high-purity alkynes or the formulation thereof has a concentration of halogen-containing impurities of less than about 100 ppm;
- c. forming a metal-containing film on the at least one passivated surface using one or more precursors during the deposition process.
A method for forming a metal-containing film via a thermal atomic layer deposition (ALD) process comprising:
- a. providing at least one a substrate in a reaction vessel;
- b. forming at least one passivated surface by exposing at least one surface of the at least one substrate to one or more high-purity alkynes or a formulation thereof, wherein the one or more high-purity alkynes or the formulation thereof has a concentration of halogen-containing impurities of less than about 100 ppm;
- c. purging the reaction vessel with a first purge gas;
- d. introducing into the reaction vessel one or more precursors;
- e. introducing into the reaction vessel a source gas;
- f. purging the reaction vessel with a second purge gas;
- and
- g. sequentially repeating steps c through f until a desired thickness of a metal-containing film is obtained.
5 more elements
Dependencies are inferred from the claim text.