Low-dielectric-tangent silica sol, and method for producing low-dielectric-tangent silica sol
AssigneeNissan Chemical Corporation
InventorsTakeshi Nakada, Kazuya Ebara, Megumi Araki, Masatoshi Sugisawa
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AssigneeNissan Chemical Corporation
InventorsTakeshi Nakada, Kazuya Ebara, Megumi Araki, Masatoshi Sugisawa
Estimating the term…
Silica particles have a dielectric loss tangent of 0.01 or less at 1 GHz and satisfy the requirements (i), (ii) and (iii): (i) an average primary particles diameter of 5 nm to 120 nm; (ii) a ratio of a specific surface area by water vapor adsorption (SH2O) to a specific surface area by nitrogen adsorption (SN2); i.e., (SH2O/SN2) of 0.6 or less; and (iii) a total silanol group content of 5% or less as determined by the following Formula (1): total silanol group content (%)=(Q2×2/4+Q3×1/4+Q4×0/4) . . . Formula (1) [in Formula (1), each of Q2, Q3 and Q4 is the proportion (%) of the peak areas derived from silicon atom structures], and a silica dispersion.
Silica particles having a dielectric loss tangent of 0.01 or less at 1 GHz and satisfying the following (i), (ii), and (iii):
A production method for surface-modified silica particles having a dielectric loss tangent of 0.01 or less at 1 GHz, the production method comprising a step of mixing, in an organic solvent, silica particles having an average primary particle diameter of 5 nm to 120 nm, a ratio of a specific surface area by water vapor adsorption (SH2O) to a specific surface area by nitrogen adsorption (SN2);
A production method for surface-modified silica particles having a dielectric loss tangent of 0.01 or less at 1 GHz, the production method comprising the following steps (A) to (C):
A production method for a surface-modified silica dispersion, the production method comprising the following steps (A) and (B):
Dependencies are inferred from the claim text.