Optical MEMS based intracranial pressure and intracranial temperature monitor

An optical MEMS based intracranial pressure (ICP) and temperature (ICT) monitor, comprising:

• a broadband light source, a tunable optical filter (TOF), an optical etalon, a plurality of optical receivers, a plurality of optical couplers, and a probe;
• wherein the probe comprises an intracranial pressure (ICP) sensor and an intracranial temperature (ICT) sensor;
• ICT is obtained by a peak wavelength of a reflection spectrum of the ICT sensor, the peak wavelength is obtained by comparing with a periodic spectrum with an absolute wavelength mark of an optical etalon;
• ICP is obtained by a depression wavelength of a reflection spectrum of the ICP sensor, the depression wavelength is obtained by comparing with a periodic spectrum with an absolute wavelength mark of an optical etalon;
• the optical etalon with an absolute wavelength mark is configured to generate a periodic spectrum as a ruler to measure the absolute peak or depression wavelength in the reflection spectrum of the ICP or ICT sensor;
• the ICP sensor and the ICT sensor are integrated in one probe and are connected with two single mode optical fibers in parallel;
• and
• the ICP sensor is a MEMS resonator structure formed by a single mode optical fiber, a MEMS membrane and a glass substrate, and a tip of the single mode optical fiber acts as a mirror;
• the MEMS membrane deforms slightly due to the ICP;
• the depression wavelength of the reflection spectrum of the ICP sensor is configured to monitor the ICP.