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US 12,502,662 B2Granted
Dielectric material comprising bismuth compound and method of making the same
AssigneeSamsung Electronics Co., Ltd.
InventorsValentina Lacivita, Yan Wang, Jeong-Ju Cho
Life of this patent
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Abstract
An electrode assembly includes a first electrode and a dielectric layer on the first electrode. The dielectric layer includes a bismuth compound of the formula Bi2(CrO4)2Cr2O7, Pb4(BiO4)(PO4), Ag3BiO3, Bi2CdO2(GeO4), Bi2Te4O11, Cs6Bi4O9, Na3Bi(PO4)2, Bi2(SeO3)3, or a combination thereof. The electrode assembly can be particularly useful in various electronic devices.
Claims18
An electrode assembly comprising:
- a first electrode;
- and
- a dielectric layer on the first electrode, the dielectric layer comprising a bismuth compound of the formula Bi2(CrO4)2Cr2O7, Pb4(BiO4)(PO4), Ag3BiO3, Bi2CdO2(GeO4), Bi2Te4O11, Cs6Bi4O9, Na3Bi(PO4)2, Bi2(SeO3)3, or a combination thereof.
A capacitor comprising:
- a first electrode,
- a second electrode, and
- a dielectric layer disposed between the first and second electrodes, wherein the dielectric layer comprises a bismuth compound of the formula Bi2(CrO4)2Cr2O7, Pb4(BiO4)(PO4), Ag3BiO3, Bi2CdO2(GeO4), Bi2Te4O11, Cs6Bi4O9, Na3Bi(PO4)2, Bi2(SeO3)3, or a combination thereof.
A method of manufacturing an electrode assembly, the method comprising:
- providing a bismuth compound of the formula Bi2(CrO4)2Cr2O7, Pb4(BiO4)(PO4), Ag3BiO3, Bi2CdO2(GeO4), Bi2Te4O11, Cs6Bi4O9, Na3Bi(PO4)2, Bi2(SeO3)3, or a combination thereof;
- providing a first electrode;
- disposing a dielectric layer comprising the bismuth compound on the first electrode;
- and
- disposing a second electrode on the dielectric layer opposite the first electrode.
2 more elements
A photocatalytic device comprising:
- a substrate;
- and
- a photocatalytic layer on the substrate, the photocatalytic layer comprising a bismuth compound of the formula Bi2(CrO4)2Cr2O7, Pb4(BiO4)(PO4), Ag3BiO3, Bi2CdO2(GeO4), Bi2Te4O11, Cs6Bi4O9, Na3Bi(PO4)2, Bi2(SeO3)3, or a combination thereof.
A transistor comprising:
- a gate electrode;
- and
- a gate dielectric layer on the gate electrode, the gate dielectric layer comprising a bismuth compound of the formula Bi2(CrO4)2Cr2O7, Pb4(BiO4)(PO4), Ag3BiO3, Bi2CdO2(GeO4), Bi2Te4O11, Cs6Bi4O9, Na3Bi(PO4)2, Bi2(SeO3)3, or a combination thereof.
Dependencies are inferred from the claim text.