Photodiodes and light emitting diodes

A device, comprising:

• a semiconductor structure comprising:
• a base portion and an elongated portion extending from the base portion, the elongated portion comprising a non-conducting material;
• a plurality of P-type-N-type (P-N) junction branches positioned at different sections of the elongated portion, each P-N junction branch comprising:
• a photoactive diode having a photoactive area;
• and
• a conductor;
• each P-N junction branch having a width, the widths of the plurality of P-N junction branches decreasing with increasing distance from the base portion, the semiconductor structure being configured to absorb photons over a range of wavelengths to which each P-N junction branch is photoactive;
• a plurality of leads, each lead configured to electrically connect to the conductor of the P-N junction branch;
• a plurality of read out transistors positioned in the base portion, each read out transistor being electrically connected to a respective P-N junction branch via a respective lead of the plurality of leads and configured to receive electrical power proportional to photons absorbed by the respective P-N junction branch;
• and
• a plurality of reset transistors positioned in the base portion, each reset transistor being electrically connectable to an input of a respective one of the plurality of read out transistors via a respective switch.