Capacitor, and device comprising the same, and method of preparing the same

A method of preparing a capacitor, the method comprising:

• forming a dielectric layer on one side of a first thin-film electrode layer by epitaxy growth;
• and
• forming a second thin-film electrode layer on the dielectric layer to thereby provide the capacitor,
• wherein the capacitor includes the dielectric layer between the first thin-film electrode layer and the second thin-film electrode layer,
• wherein the first thin-film electrode layer and the second thin-film electrode layer have a conductive perovskite-type crystal structure,
• the dielectric layer includes a metal oxide having a dielectric perovskite-type crystal structure,
• the metal oxide includes a first element in a cubooctahedral site, a second element in an octahedral site, and a third element in an octahedral site,
• a valency of the third element is lower than a valency of the second element, and
• the third element is a dopant.