RF amplifier devices and methods of manufacturing including modularized designs with flip chip interconnections

A transistor device, comprising:

• a transistor die comprising a gate terminal, a drain terminal, and a source terminal;
• and
• a passive component assembly electrically coupled to the gate terminal, the drain terminal, and/or the source terminal, the passive component assembly comprising one or more passive electrical components on a first external surface thereof,
• wherein the transistor die is flip-chip mounted on a second external surface of the passive component assembly opposite the first external surface.

A transistor device, comprising:

• a transistor die comprising a gate terminal, a drain terminal, and a source terminal;
• and
• a passive component assembly electrically coupled to the gate terminal, the drain terminal, and/or the source terminal, the passive component assembly comprising one or more passive electrical components on a first surface thereof,
• wherein the transistor die is flip-chip mounted on the first surface of the passive component assembly adjacent the one or more passive electrical components.