Semiconductor laser having improved facet reliability
AssigneeMACOM Technology Solutions Holdings, Inc.
InventorsAkshitha Gadde, Wolfgang Parz, Yifan Jiang, Jason Daniel Bowker
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Abstract
Described herein are examples of improved semiconductor lasers having improved facet reliability for operation at high power and high current without significant change in device performance. The semiconductor laser may include a first semiconductor layer, an active layer, a second semiconductor layer sequentially adjacent to each other and arranged on a substrate, and a contact layer. In one example, the improved semiconductor laser may have a conductive contact less than the length of the semiconductor laser cavity and/or a dielectric layer arranged on at least one of the end portions of the contact layer.
Claims17
A semiconductor laser having a cavity comprising:
- a substrate;
- a first semiconductor layer, an active layer, and a second semiconductor layer sequentially adjacent to each other and arranged on the substrate;
- a contact layer arranged on the first semiconductor layer;
- a dielectric layer arranged on the first semiconductor layer;
- a conductive contact arranged on the contact layer and the dielectric layer, the conductive contact having a rectangular central portion being in direct contact with the contact layer;
- and
- wherein a longitudinal length of the rectangular central portion is less than a longitudinal length of the cavity of the semiconductor laser.
A semiconductor laser comprising:
- a substrate;
- a first semiconductor layer, an active layer, and a second semiconductor layer sequentially adjacent to each other and arranged on the substrate;
- a contact layer arranged on the first semiconductor layer, the contact layer having a central portion bounded by end portions;
- a dielectric layer arranged on at least one of the end portions of the contact layer and the first semiconductor layer;
- and
- a conductive contact arranged on the contact layer and the dielectric layer, wherein the conductive contact is electrically connected to the central portion of the contact layer.
A conductive contact for a semiconductor laser:
- a rectangular central portion;
- a bond pad that includes a first bond pad and second bond pad, the central portion being located between the first bond pad and the second bond pad;
- wherein a longitudinal length of the rectangular central portion of the conductive contact is less than a cavity length of the semiconductor laser;
- and
- wherein a pullback region is defined between edges of the central portion and the first and second bond pads, the pullback region having a length between approximately 2 microns and 40 microns.
Dependencies are inferred from the claim text.