Power half-bridge module, power inverter, and method for producing a power half-bridge module

A power inverter comprising:

• at least three power half-bridge modules, wherein each power half-bridge module comprises:
• a busbar carrier including an electrically insulating insulation material embedding first busbar with a first longitudinal section and a second longitudinal section adjoining the first longitudinal section in the longitudinal direction of the busbar carrier;
• wherein the first busbar has a first exposed contact area on the first longitudinal section and a second exposed contact area on the second longitudinal section and to the side of a first surface of the busbar carrier;
• wherein the busbar carrier has a first recess located at the height of the second longitudinal section and extending from the first surface to a second surface of the busbar carrier facing away from the first surface;
• a semiconductor carrier with a second busbar and a third busbar in a row in the longitudinal direction of the busbar carrier;
• a first semiconductor switch with a lower-side load-current contact area arranged on a contact area of the second busbar;
• and
• second semiconductor switch with a lower-side load-current contact area arranged on a contact area of the third busbar;
• wherein the semiconductor carrier is arranged on the second surface the busbar carrier the first and second semiconductor switches protrude into the first recess;
• wherein the second semiconductor switch has an upper-side load-current contact area electrically connected to the second contact area of the first busbar;
• wherein the power half-bridge modules form a three-phase bridge circuit of the power inverter.

A method for producing a power half-bridge module, the method comprising:

• providing a busbar carrier including an electrically insulating insulation material, with a first busbar comprising a first longitudinal section and a second longitudinal section which adjoins the first longitudinal section in the longitudinal direction of the busbar carrier, wherein both the first busbar and the second busbar are embedded in the insulation material;
• forming a first exposed contact area on the first longitudinal section and a second exposed contact area on the second longitudinal section, wherein the second contact area is formed to the side of a first surface of the busbar carrier;
• forming a first recess in the busbar carrier, wherein the first recess is formed at the height of the second longitudinal section extending from the first surface to a second surface of the busbar carrier, which second surface faces away from the first surface;
• providing a semiconductor carrier comprising a second busbar and a third busbar;
• arranging a first semiconductor switch by way of its lower-side load-current contact area on a contact area of the second busbar and physically and electrically connecting the first semiconductor switch to the second busbar;
• arranging a second semiconductor switch by way of its lower-side load-current contact area on a contact area of the third busbar and physically and electrically connecting the second semiconductor switch to the third busbar;
• after arranging the first and the second semiconductor switch, arranging the semiconductor carrier on the second surface the busbar carrier in such a way that the first and second semiconductor switches protrude into the first recess;
• and electrically connecting the second semiconductor switch by way of its upper-side load-current contact area to the second contact area of the first busbar.