US 12,500,085 B2 · Wet-dry bilayer resist

Abstract

A method of patterning a substrate includes forming a multilayer photoresist stack on a substrate. The multilayer photoresist stack includes a dry photoresist layer, deposited by vapor deposition, over a wet photoresist layer deposited by spin-on deposition. A first relief pattern is formed in the wet photoresist layer by exposure to a first pattern of actinic radiation of a first wavelength and development of developable portions of the wet photoresist layer using a first development process. The first relief pattern uncovers portions of the dry photoresist layer. A second relief pattern is formed in the dry photoresist layer by exposure to a second pattern of actinic radiation of a second wavelength and development of developable portions of the dry photoresist layer using a second development process. The developable portions of the dry photoresist layer are defined by the second pattern of actinic radiation and the first relief pattern.

Claims20

Dependent claims

A method of patterning a substrate, the method comprising:

forming a multilayer photoresist stack on a substrate, the multilayer photoresist stack comprising a dry photoresist layer deposited by vapor deposition, and a wet photoresist layer deposited by spin-on deposition, the wet photoresist layer positioned over the dry photoresist layer;
forming a first relief pattern in the wet photoresist layer by exposure to a first pattern of actinic radiation of a first wavelength and development of developable portions of the wet photoresist layer using a first development process, the first relief pattern uncovering portions of the dry photoresist layer;
and
forming a second relief pattern in the dry photoresist layer by exposure to a second pattern of actinic radiation of a second wavelength and development of developable portions of the dry photoresist layer using a second development process, the developable portions of the dry photoresist layer defined by a combination of the second pattern of actinic radiation and the first relief pattern, the first relief pattern and the second relief pattern together forming a combined relief pattern.

1 more element

Dependencies are inferred from the claim text.

Wet-dry bilayer resist

Life of this patent

Wet-dry bilayer resist

Life of this patent

Abstract

Claims20