Apparatus for edge control during plasma processing

An apparatus for plasma processing comprising:

• a pedestal configured to support a substrate comprising a major surface, a vertical direction of the apparatus being normal to the major surface;
• a resonant structure with a resonant frequency greater than 30 MHz disposed at, on, or in the pedestal, the resonant structure surrounding the substrate and comprising a conductive structure comprising an inductive structure electrically connected to, disposed over, and vertically aligned with a capacitive structure that comprises a top plate and a bottom plate in a parallel plate capacitor configuration;
• and
• an edge control power supply coupled to the pedestal, the edge control power supply being configured to indirectly couple alternating current (AC) power to the resonant structure substantially at the resonant frequency through an insulating material separating the capacitive structure from the pedestal to generate a plasma localized at an edge region of the substrate.

An apparatus for plasma processing comprising:

• a pedestal configured to support a substrate;
• a conductive structure comprising a capacitive structure and an inductive structure, both fully encased within a focus ring disposed on the pedestal and comprising an annular shape surrounding the substrate, the capacitive structure and the inductive structure together forming a resonant inductor-capacitor (LC) circuit;
• an edge control power supply coupled to the pedestal, the edge control power supply being configured to couple alternating current (AC) power to the conductive structure to generate a plasma localized along the annular shape surrounding the substrate;
• and
• a bias power supply configured to couple bias power to the substrate through a feed line, the AC power of the edge control power supply also being connected to the feed line along with the bias power.